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Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

  • Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
  • Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
  • Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
  • Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
Product Details:
Place of Origin: Original Factory
Brand Name: ON/Fairchild
Certification: ROHS
Model Number: G40N60UFD
Payment & Shipping Terms:
Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: BOX
Delivery Time: 1-3Days
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 100000pcs
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Detailed Product Description
Features: High Speed Switching Series: G40N60UFD
Application: General Inverters Package: TO-3P
Name: IGBT Transistor Certified: ROHS
High Light:

insulated gate bipolar transistor

,

high speed switching diode

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P

 

Descriptions:

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

 

Features : 

• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.).

 

Applications :

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

 

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode 0

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