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16 Mbit SPI Serial Flash Memory Chip IC SST25VF016B With Flexible Erase Capability

16 Mbit SPI Serial Flash Memory Chip IC SST25VF016B With Flexible Erase Capability

  • 16 Mbit SPI Serial Flash Memory Chip IC SST25VF016B With Flexible Erase Capability
16 Mbit SPI Serial Flash Memory Chip IC SST25VF016B With Flexible Erase Capability
Product Details:
Place of Origin: Original Factory
Brand Name: Microchip
Certification: ROHS
Model Number: SST25VF016B
Payment & Shipping Terms:
Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: BOX
Delivery Time: 1-3Days
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 100000pcs
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Detailed Product Description
Series: SST25VF016B Voltage: 2.7-3.6V
Feature: SPI Flash Memory Memory Capacity: 16M-bit
Application: LCD Monitors, Flat Panel TV, Printers, GPS, MP3 Package: SOIC8
Clock Frequency: Up To 50 MHz Interface: SPI Serial Flash
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16 Mbit SPI Serial Flash Memory Chip IC Microchip SST25VF016B with Flexible Erase Capability

 

 
GENERAL DESCRIPTIONS
 

The 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF016B devices are enhanced with improved operating frequency and even lower power consumption than the original SST25VFxxxA devices.

 

SST25VF016B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. SST25VF016B devices significantly improve performance and reliability, while lowering power consumption.

 

The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF016B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

 
FEATURES

 • Single Voltage Read and Write Operations
- 2.7-3.6V

• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency
- Up to 50 MHz

• Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention

• Low Power Consumption:
- Active Read Current: 10 mA (typical)
- Standby Current: 5 µA (typical)

• Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Uniform 64 KByte overlay blocks

• Fast Erase and Byte-Program:
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7 µs (typical)

• Auto Address Increment (AAI) Programming
- Decrease total chip programming time over Byte-Program operations

• End-of-Write Detection
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode

• Hold Pin (HOLD#)
- Suspends a serial sequence to the memory without deselecting the device

• Write Protection (WP#)
- Enables/Disables the Lock-Down function of the status register

• Software Write Protection
- Write protection through Block-Protection bits in status register

• Temperature Range
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C

• Packages Available
- 8-lead SOIC (200 mils)
- 8-contact WSON (6mm x 5mm)

• All devices are RoHS compliant
 
 
 
 
 
 

 

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